inchange semiconductor product specification silicon npn power transistors 2N3773 description ? with to-3 package ? complement to type 2n6609 ?high dc current gain ? low saturation voltage ? high safe operating area applications ? designed for high power audio, disk head positioners and other linear applications. these devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc conv erters or inverters. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 7 v i c collector current 16 a i cm collector current-peak 30 a i b base current 4 a i bm base current-peak 15 a p d total power dissipation derate above 25 ?? t c =25 ?? 150 0.855 w w/ ?? t j junction temperature 150 ?? t stg storage temperature -65~200 ?? fig.1 simplified outline (to-3) and symbol www.datasheet.net/ datasheet pdf - http://www..co.kr/
inchange semiconductor product specification 2 silicon npn power transistors 2N3773 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 140 v v cesat-1 collector-emitter saturation voltage i c =8a; i b =0.8a 1.4 v v cesat-2 collector-emitter saturation voltage i c =16a ;i b =3.2a 4.0 v v be base-emitter on voltage i c =8a ; v ce =4v 2.2 v i ceo collector cut-off current v ce =140v; i b =0 2.0 ma i cex collector cut-off current v ce =140v; v be(off) =1.5v t c =150 ?? 2.0 10.0 ma i ebo emitter cut-off current v eb =7v; i c =0 5.0 ma h fe-1 dc current gain i c =8a ; v ce =4v 15 60 h fe-2 dc current gain i c =16a ; v ce =4v 5 i s/b second breakdown collector current with base forward biased v ce =100vdc,t=1.0s, nonrepetitive 1.5 a thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.17 ??/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
inchange semiconductor product specification 3 silicon npn power transistors 2N3773 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) www.datasheet.net/ datasheet pdf - http://www..co.kr/
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